technical data pnp darlington power silicon transistor qualified per mil - prf - 19500/501 devices qualified level 2N6051 2n6052 jan jantx jantxv maximum ratings ratings symbol 2N6051 2n6052 unit collector - emitter voltage v ceo 80 100 vdc col lector - base voltage v cbo 80 100 vdc emitter - base voltage v ebo 5.0 vdc base current i b 0.2 adc collector current i c 12 adc total power dissipation (1) @ t c = +25 0 c @ t c = +100 0 c p t 150 75 w w operating & storage junction temperature range t op , t stg - 55 to +175 0 c thermal characteristics characteristics symbol max. unit thermal resistance, junction - to - case r q jc 1.0 0 c/w 1) derate linearly at 1.0 w/ 0 c above t c > +25 0 c *see appendix a for package outline electrical characteristics (t c = 25 0 c unle ss otherwise noted) characteristics symbol min. max. unit off characteristics collector - emitter breakdown voltage i c = 100 madc 2N6051 2n6052 v (br) ceo 80 100 vdc collector - emitter cutoff current v ce = 40 vdc 2N6051 v ce = 50 vdc 2n6052 i ceo 1.0 1.0 madc collector - emitter cutoff current v ce = 80 vdc, v be = 1.5 vdc 2N6051 v ce = 100 vdc, v be = 1.5 vdc 2n6052 i cex 0.5 0.5 madc emitter - base cutoff current v eb = 5.0 vdc i ebo 2.0 madc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2 to - 3* (to - 204aa)
2N6051, 2n6052 jan series electrical characteristics (con?t) characteristics symbol min. max. unit on characteristics (2) forward - current transfer ratio i c = 1.0 adc, v ce = 3.0 vdc i c = 6.0 adc, v ce = 3.0 vdc i c = 12 adc, v ce = 3.0 vdc h fe 1,000 1,000 150 18,000 collector - emitter saturation voltage i c = 12 adc, i b = 120 madc i c = 6.0 adc, i b = 24 madc v ce(sat) 3.0 2.0 vdc base - emitter saturation voltage i c = 12 adc, i b = 120 madc v be(sat) 4.0 vdc base - emitter voltage i c = 6.0 adc, v ce = 3.0 vdc v be 2.8 vdc dynamic characteristics magnitude of common emitter small - signal short - circuit forward current transfer ratio i c = 5.0 adc, v ce = 3.0 vdc, f = 1.0 mhz ? h fe ? 10 250 small - signal short - circuit forward current transfer ratio i c = 5.0 adc, v ce = 3.0 vdc, f = 1.0 khz h fe 1,000 output capacitance v cb = 10 vd c, i e = 0, 100 khz f 1.0 mhz c obo 300 pf switching characteristics turn - on time v cc = 30 vdc; i c = 5.0 adc; i b = 20 madc t on 2.0 m s turn - off time v cc = 30 vdc; i c = 5.0 adc; i b1 = i b2 = 20 madc t off 10 m s safe operating area dc tes ts t c = +25 0 c + 10 0 c - 0 0 , 1 cycle, t 3 1.0 s test 1 v ce = 12.5 vdc, i c = 12 adc all types test 2 v ce = 30 vdc, i c = 5.0 adc all types test 3 v ce = 70 vdc, i c = 200 madc 2N6051 v ce = 90 vdc, i c = 155 madc 2n6052 (2) pulse test: pulse widt h = 300 m s, duty cycle 2.0%. 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2
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